1 / 6 www.asb.co.kr february 2009 p lerow tm apm1950 - p29 low noise & high oip3 medium power ampl i fier module parameter unit specifications min typ max frequency range mhz 1920 1980 gain db 33 34 gain flatness db ? 0.3 ? 0.5 noise figure db 1.8 2.0 output ip3 (1) dbm 44 47 s11 / s22 (2) db - 18 / - 10 output p1db dbm 28 29 switching time (3) ? sec - supply current ma 460 500 supply voltage v 5 impedance ? 50 max. rf input power dbm c.w 23 ~ 25 (before fail) package type & size mm surface mount type, 13wx13lx3.8h operating temperature is - 40 ? c to +85 ? c. 1) oip3 is measured with two tones at an output power of 15 dbm / tone separated by 1 mhz. 2) s11/s22 (max) is the worst value within the frequency band. 3) switching time means the time that takes for output power to get stabilized to its final level after switc hing dc voltage from 0 v to v s . pin number function 3 rf in 8 rf out 10 +vcc other s ground feature s c o u pl er note: 1. the number and size of ground via holes in a circuit board is critical for th ermal rf grounding consider a tions. 2. we recommend that the ground via holes be placed on the bottom of all ground pins for better rf and thermal performance, as shown in the dra w ing at the left side. description c o u pl er c o u pl er c o u pl er c o u pl er s 21 = 34.3 db @ 1920 mhz = 33.7 db @ 1980 mhz nf of 1.8 db over fr e quency unconditionally stable single 5v supply high oip3 @ low current website: www.asb.co.kr e - mail: sales@asb.co.kr tel: (82) 42 - 528 - 722 3 f ax : (82) 42 - 528 - 7222 more inform a tion 2 - stage single type typ. @ t = 25 ? c, v s = 5 v, freq. = 1950 mhz, z o.sys = 50 ohm specifications (in pr o duction) asb inc. solder stencil area ? 0.3 plated thru holes to ground plane plerow (top view) (bottom view) (side view) 2 x ? 2.0 plated thru holes to screw on heat sinker (recommended footprint) ou t line drawing (unit: mm) the plerow tm apm - series is an internally matched amplifier mini - module for such application band in smd package with the output p1db of 29 dbm. it is compactly designed for low current consumption and high oip3. integrating all the components for biasing and matching within the module enhances production yield and throughput as well. it passes through the stringent dc, rf, and reliability tests. not sample test but 100% quality control test is made befo re packing.
2 / 6 www.asb.co.kr february 2009 p lerow tm apm1950 - p29 low noise & high oip3 medium power ampl i fier module s - param e ters oip3 p1db 1920~1980 mhz +5 v stability fa c tor (k) typical performance (measured) noise figure
3 / 6 www.asb.co.kr february 2009 p lerow tm apm1950 - p29 low noise & high oip3 medium power ampl i fier module output channel power (@ aclr= - 45dbc, +/ - 5mhz of f set) ** test source : agilent e4433b (3gpp w - cdma test model - 1 64dpch) oip3 vs output power (@ 1mhz offset, 1 - tone power) aclr vs channe l power
4 / 6 www.asb.co.kr february 2009 p lerow tm apm1950 - p29 low noise & high oip3 medium power ampl i fier module item vol t age s11 (db ) s22 (db) s21 (db) g/f (db) nf (db) p1db (dbm) oip3 (dbm) current (ma) 4.5 - 30.77 - 14.64 31.92 0.53 1.742 28.99 41.99 319 4.6 - 29.95 - 14.62 32.03 0.53 1.770 29.25 42.78 347 4.7 - 29.42 - 14.62 32.12 0.53 1.820 29.29 43.80 374 4.8 - 28.81 - 14.58 32.19 0.5 3 1.852 29.42 45.15 401 4.9 - 28.31 - 14.57 32.25 0.53 1.908 29.54 46.93 426 5.0 - 28.04 - 14.63 32.30 0.53 1.942 29.65 47.53 451 5.1 - 28.65 - 16.63 32.33 0.53 2.000 29.73 47.16 475 5.2 - 27.37 - 14.69 32.35 0.53 2.060 29.81 46.91 498 5.3 - 27.19 - 14.78 32.35 0.53 2.103 29.86 45.83 520 5.4 - 27.12 - 14.82 32.33 0.51 2.166 29.91 45.34 539 5.5 - 27.04 - 14.96 32.30 0.51 2.210 29.96 44.93 558 item temp. s11 (db) s22 (db) s21 (db) g/f (db) nf (db) p1db (dbm) oip3 (dbm) current (ma) - 40 ? c - 28.53 - 13.24 33.34 0.50 1.583 30.10 43.40 418 - 20 ? c - 28.39 - 13.67 33.03 0.49 1.727 30.00 44.27 433 0 ? c - 28.49 - 13.83 32.81 0.49 1.822 29.85 45.34 442 25 ? c - 28.15 - 14.37 32.33 0.48 1.951 29.44 47.51 440 40 ? c - 27.68 - 14.67 32.07 0.45 2.063 29.48 47.05 440 60 ? c - 27.39 - 1 4.92 31.75 0.43 2.252 29.32 46.71 435 80 ? c - 26.58 - 15.29 31.30 0.40 2.396 29.10 45.04 430 100 ? c - 25.64 - 15.97 30.88 0.36 2.616 28.86 43.51 425 rf performance with voltage change rf performance with operating temperature
5 / 6 www.asb.co.kr february 2009 p lerow tm apm1950 - p29 low noise & high oip3 medium power ampl i fier module 1) the tantal or mlc (multi layer ceramic) capacitor is optional and for bypassing the ac noi se introduced from the dc supply. the capacitance value may be determined by customer s dc supply status . the c a- pacitor should be placed as close as possible to v s pin and be connected directly to the ground plane for the best electrical performance . 2) dc bl ocking capacitors are always necessarily placed at the input and output port for allowing only the rf signal to pass and blocking the dc component in the signal. the dc blocking capacitors are inclu d- ed inside the apm module. therefore, c1 & c2 capacitors m ay not be necessary, but can be added just in case that the customer wants. the value of c1 & c2 is determined by considering the application fr e- quency. application circuit recommended soldering reflow process 20~40 sec 260 ? c 200 ? c 150 ? c 60~180 sec ramp - up (3 ? c/sec) ramp - down (6 ? c/sec) + - apm out in c1 c2 v s tantal or ml c (multi layer c e ramic) c a pacitor in out vs size 40x40mm (for apm series C 13x13mm)
6 / 6 www.asb.co.kr february 2009 p lerow tm apm1950 - p29 low noise & high oip3 medium power ampl i fier module channel power vs. aclr test configuration apm1950 C p29 evaluation board attached with heat sink evaluation board * in order to prevent damage of d.u.t (apm - series) from heating, you must to use a properly sized heat sink for testing a module.
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